eng URI http://hdl.handle.net/10795/2976 φυσικές επιστήμες ηλεκτρονική ηλεκτρολογικό υλικό ηλεκτρική ενέργεια In the present work the electrical properties of AlN polycrystalline films deposited at low temperatures by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated. The polarization build-up during constant current injection as well as the depolarization process after the current stress have been investigated through monitoring voltage transients in Metal – Insulator – Metal (MIM) capacitors, in temperature range from 300 K to 400 K. Moreover, current – voltage characteristics obtained at different temperatures revealed that charge collection at low fields in these films occurs through variable range hopping. 4 pp. LOMv1.0 creator LOMv1.0 Scientific Coordinator LOMv1.0 Project Executing Organisation 2012 Digital Library of the Operational Programme "Education and Lifelong Learning" abstract types Text AlN polycrystalline films Plasma-assisted molecular beam epitaxy MEMS devices MEMS switches 465154 application/pdf http://repository.edulll.gr/edulll/bitstream/10795/2976/2/2976_1.84_%ce%94%ce%97%ce%9c_15_10_12.pdf URI http://hdl.handle.net/10795/2976 LOMv1.0creator 2016-04-27T11:51:15Z LOMv1.0validator 2016-04-27T11:51:15Z LOMv1.0 gre no no Copyright EYD-EPEDBM (Operational Programme "Education and Lifelong Learning")